▎ 摘　　要

NOVELTY - The manufacturing method involves forming a tungsten carbide nanoflake on a nanocrystalline diamond film (S1) by chemical vapor deposition process in which hydrogen plasma is applied. The degree of supersaturation at a growth front of tungsten carbide is controlled during the formation of tungsten carbide nanoflake, so that the tungsten carbide grows to have a nanowall structure. The activity of the tungsten carbide nanoflake is increased to a hydrogen evolution reaction by removing an oxide layer or a graphene layer from a surface of the tungsten carbide nanoflake (S2). USE - Manufacturing method of electrode (claimed) for hydrogen production. ADVANTAGE - The secondary nucleation on the growth front is minimized during a growth process to vertically grow in a single-crystal form, since the growth species flux is low in a relatively low supersaturation state, thus forming a nanowall structure. The tungsten carbide of nanowall structure is most excellent in onset potential and has no overpotential degradation after a number of cycles. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for an electrode for hydrogen production using a tungsten carbide nanoflake. DESCRIPTION OF DRAWING(S) - The drawing shows the flowchart of a method for manufacturing an electrode for hydrogen production using a tungsten carbide nanoflake. Forming tungsten carbide nanoflake on nanocrystalline diamond film (S1) Removing oxide layer or graphene layer from surface of tungsten carbide nanoflake (S2) Forming protection layer to cover surface of tungsten carbide (S3)