▎ 摘　　要

NOVELTY - The method involves forming (4-1) the exposed side walls in a foundation material covering a substrate. The prohibitive caps are formed (4-2) at respective ends of exposed side walls in foundation material. The grapheme growth is isolated within exposed side walls in the foundation material by prohibitive caps. A respective graphene stack in the graphene stacks is grown (4-3) on each exposed side wall in the exposed side walls. Each graphene stack in the graphene stacks is oriented along the corresponding exposed side wall in the exposed side walls in the foundation material. USE - Method of manufacturing graphene device including graphene stacks (claimed). ADVANTAGE - The respective graphene stack in the graphene stacks is efficiently grown on each exposed side wall in the exposed side walls such that each graphene stack is oriented along the corresponding exposed side wall. The different pitch and duty cycle combinations in grapheme devices are utilized to improve efficiency. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method manufacturing device including graphene stacks. Step for forming the exposed side walls in the foundation material covering the substrate (4-1) Step for patterning the substrate to include the side walls in the substrate, and coating each side wall in the side walls with the foundation material (4-1a) Step for forming prohibitive caps at respective ends of exposed side walls in foundation material (4-2) Step for exposing the portion of the substrate material (4-2c) Step for growing respective graphene stack in the graphene stacks on each exposed side wall in the exposed side walls (4-3)