▎ 摘　　要

NOVELTY - The detector has a semiconductor layer (4) which has a stepped section (40) and is sensitive to a detection wavelength. An insulating film (3) is positioned on the stepped section and provided with an opening (3a) which exposes portion of the stepped section. A two-dimensional material layer (1) is positioned on the insulating layer and the opening and has a connection region (1c) which is electrically connected to the semiconductor layer through the opening. A first electrode portion (2a) is positioned on the insulating film and electrically connected to the two-dimensional material layer. A second electrode portion (2b) is positioned on the semiconductor layer and electrically connected to the first electrode portion through the connection region of the two-dimensional material layer. USE - Electromagnetic wave detector for electromagnetic wave detector assembly (claimed) for detecting visible light or infrared light, and radio waves, such as X-rays, UV light, near-infrared light, and terahertz waves, or microwave suitable for image sensor. ADVANTAGE - The two-dimensional material layer can be made to act as an electromagnetic wave absorbing layer, by adjusting the size of the band gap of the multilayer graphene according to the detection wavelength, and the optical filter can be made unnecessary. Thus, the number of optical components can be reduced, and the loss of incident light due to passing through the optical filter can be reduced. The influence of the electric field change due to the optical gate effect is received and the modulation of the optical carrier is indirectly made to contribute to the high sensitivity of the electromagnetic wave detector, if there is an area installed on the semiconductor layer on which the electromagnetic wave is made incident through the insulating film. Since the two-dimensional material layer and the semiconductor layer are electrically connected at the opening, the current can be made zero by adjusting the voltage. Thus, only the current derived from the optical carrier injected into the two-dimensional material layer is detected as a current changed by the optical gate effect, when the light is not irradiated, the current becomes zero. Thus, the electromagnetic wave detector can be turned OFF. The mobility of carriers in the two-dimensional material layer is improved, and the detection sensitivity of the electromagnetic wave detector is improved. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the electromagnetic wave detector. Two-dimensional material layer (1) Connection region (1c) First electrode portion (2a) Second electrode portion (2b) Insulating film (3) Opening (3a) Semiconductor layer (4) Stepped section (40)