• 专利标题:   Growing of graphene on sapphire substrate used for manufacturing device, involves decomposing carbon-based halide on sapphire substrate and using substrate for catalyzing growth.
  • 专利号:   CN104803709-A
  • 发明人:   JIANG W, LIN Z
  • 专利权人:   QUANZHOU BOTAI SEMICONDUCTOR SCI TECHN
  • 国际专利分类:   C04B041/50
  • 专利详细信息:   CN104803709-A 29 Jul 2015 C04B-041/50 201568 Pages: 6 Chinese
  • 申请详细信息:   CN104803709-A CN10035269 24 Jan 2014
  • 优先权号:   CN10035269

▎ 摘  要

NOVELTY - Growing of graphene on sapphire substrate involves decomposing carbon-based halide on sapphire substrate and using substrate for catalyzing growth. USE - Growing of graphene on sapphire substrate used for manufacturing device. ADVANTAGE - The method enables growth of graphene with large area, without using a metal catalyst and without requiring graphite transfer process. The graphene is used directly in the manufacture of various devices and provides devices with improved reliability, electrical characteristics and reduced complexity during fabrication.