▎ 摘　　要

NOVELTY - Carbon enabled vertical light emitting transistor comprises light emitting cell comprises light emitting layer which is formed of light emitting material. The light emitting layer has first and second sides in conductive relation to conductive drain electrode and source electrode. The capacitor comprises dielectric layer formed of dielectric material, dielectric layer has first and second sides in conductive relation to one of either the conductive source or drain electrodes, and conductive gate electrode and substrate in supportive relation with each of drain and gate electrodes. The drain and source electrodes are cathode and anode of light emitting cell. USE - Carbon enabled vertical light emitting transistor. ADVANTAGE - The carbon enabled vertical light emitting transistor exhibits improved external efficiency. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: a method for forming vertical light emitting transistors, which involves forming light emitting layer formed of light emitting material, light emitting layer has first and second sides, forming conductive drain electrode and conductive source electrode in conductive relation with side of said light emitting layer, forming least one capacitor comprises dielectric layer formed of dielectric material, dielectric layer has first and second sides in conductive relation to one of either the conductive source or drain electrodes, and conductive gate electrode, encapsulating formed layers using one of either glass or barrier film, electrode providing between light emitting layer and dielectric layer is gate tunable carbon electrode; and#a vertical light emitting display, which comprises multiple of pixels comprises multiple of vertical light emitting transistors electronically coupling into addressing electrode lines, each vertical light emitting transistor comprises light emitting cell comprises light emitting layer.