▎ 摘　　要

NOVELTY - Preparing graphene material using a laser heating device, comprises: annealing 500 nm of nickel film plated on the surface of a substrate, placing the substrate on a quartz tube, assembling a temperature sensor, and regulating laser optical path and parameters on a laser; injecting argon in a sealed quartz tube, and injecting hydrogen; and heating the substrate regions using the laser, growing selectively, filling methane in the quartz tube and growing the graphite for 3-5 minutes continuously with hydrogen, closing the laser, removing light beams and removing the samples, and cooling. USE - The method is useful for preparing graphene material (claimed) that is useful to prepare high-speed electronic devices. ADVANTAGE - The method: does not require any additional heating area because the light beams can be removed rapidly, so that the temperature can be reduced, the growth of the unnecessary multi-layer graphene can be reduced and a large amount of high-quality graphene material can be prepared; saves the photoetching step, so that the monolayer graphene can be formed easily by one step; and provides monolayer graphene with high electronic transmission property, good responding frequency and wider light wave section transparency. DETAILED DESCRIPTION - Preparing graphene material using a laser heating device, comprises: annealing 500 nm of nickel film plated on the surface of a substrate as the catalyst of growing the graphene, placing the substrate on a quartz tube, assembling a temperature sensor to monitor the temperature of the substrate, and regulating laser optical path and parameters on a laser so that the diffraction grating stripes acquired by the grating can be aligned to the laser on the substrate; injecting argon in a sealed quartz tube in a flow of 200 sccm to discharge the air in the quartz tube, and injecting the same flow of hydrogen in the sealed quartz tube to keep for 5 minutes after having been kept for 30 minutes; and heating the substrate regions using the laser, growing selectively, filling methane in the quartz tube as the reaction precursor when the temperature displayed on the temperature sensor is 900 degrees C and growing the graphite for 3-5 minutes continuously with hydrogen as reducing gas at the average flow of 100 sccm, closing the laser, removing light beams and removing the samples, and cooling naturally to obtain a large area of monolayer graphene samples.