• 专利标题:   Preparation of graphene-doped tungsten-copper alloy involves mixing copper powder, tungsten powder and nickel-plated graphene powder, press-molding and performing high-temperature liquid-phase infiltration sintering.
  • 专利号:   CN106498209-A, CN106498209-B
  • 发明人:   CHEN W, DONG L, WANG J
  • 专利权人:   UNIV XIAN TECHNOLOGY, UNIV XIAN TECHNOLOGY
  • 国际专利分类:   B22F003/10, C22C001/05, C22C027/04, C23C018/36
  • 专利详细信息:   CN106498209-A 15 Mar 2017 C22C-001/05 201726 Pages: 10 Chinese
  • 申请详细信息:   CN106498209-A CN10962749 28 Oct 2016
  • 优先权号:   CN10962749

▎ 摘  要

NOVELTY - Preparation of graphene-doped tungsten-copper alloy involves mixing a copper powder, a tungsten powder and a nickel-plated graphene powder, press-molding and performing high-temperature liquid-phase infiltration sintering. USE - Preparation of graphene-doped tungsten-copper alloy (claimed). ADVANTAGE - The method enables simple, economical and easy preparation of graphene-doped tungsten-copper alloy having excellent mechanical property, electrical property, thermal property, physical property and service life, with high productivity and low energy consumption.