• 专利标题:   Schottky diode hydrogen sensor core comprises four-layer structure and conductive lead, where four-layer structure sequentially includes hydrogen cracking metal layer, hydroxyl diffusion barrier layer and semiconductor layer.
  • 专利号:   CN112858440-A, CN112858440-B
  • 发明人:   FANG H, LI R, LI S
  • 专利权人:   HARBIN INST TECHNOLOGY
  • 国际专利分类:   G01N027/414
  • 专利详细信息:   CN112858440-A 28 May 2021 G01N-027/414 202161 Pages: 11 Chinese
  • 申请详细信息:   CN112858440-A CN10155170 04 Feb 2021
  • 优先权号:   CN10155170

▎ 摘  要

NOVELTY - Schottky diode hydrogen sensor core comprises a four-layer structure and a conductive lead (1). The four-layer structure sequentially includes a hydrogen cracking metal layer (2), a hydroxyl diffusion barrier layer (3), a semiconductor layer (4) and a current collector layer (5). USE - Schottky diode hydrogen sensor core. ADVANTAGE - The Schottky diode hydrogen sensor core has special performance of anti-humidity interference at room temperature, and the water vapor in the gas environment at room temperature will not reduce the sensitivity of the Schottky diode hydrogen sensor core to hydrogen, and reduces humidity of the conventional hydrogen sensor core. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the Schottky diode hydrogen sensor core. (Drawing includes non-English language text). Conductive lead (1) Hydrogen cracking metal layer (2) Hydroxyl diffusion barrier layer (3) Semiconductor layer (4) Current collector layer (5)