▎ 摘　　要

NOVELTY - Forming a single-layer or few-layer graphene film, comprises: forming a graphene film on a surface of a growth substrate; coating the graphene film on the growth substrate with a protective support layer; and etching the surface of the growth substrate to release the graphene film and the protective support layer from the growth substrate, where the protective support layer maintains the integrity of the graphene film during and after its release from the growth substrate. USE - The graphene film is useful as: a transparent electrode; an ultrathin conducting electrode; an electrode for a battery; a transistor device (both for low and high frequency); a sensor to detect a chemical or biological agent; an optical detector; an interconnect for an integrated circuit; an on-chip capacitor for an integrated circuit; an on-chip inductor for an integrated circuit; a hetero-junction device (metal-semiconductor) including graphene nanoribbons with different crystal orientations; an in-plane thermal conductor to spread heat dissipation; a quantum device or spintronic device; a graphene-nanotube heterostructure (together with nanotubes); a p-n junction diode or bi-polar junction transistor; a device with an adjustable bandgap; and as an interface for different materials (e.g., for interfacing with silicon, gallium nitride and/or gallium arsenide). ADVANTAGE - The method provides: large area, high quality single-layer or few-layer graphene films, ideally on any substrate; and improved thickness uniformity for the films. The films exhibit excellent mechanical stability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for the single-layer or few-layer graphene film, prepared by the above method.