▎ 摘　　要

NOVELTY - The detector has a silicon/ silicon di-oxide substrate arranged with a graphene layer. A metal electrode is arranged on the graphene layer. The silicon/ silicon di-oxide substrate is formed by placing a silicon layer at the bottom of a silicon di-oxide layer. Resistivity of the silicon di-oxide layer is 1-100 ohm cm. Thickness of silicon di-oxide layer is 50-500nm. The graphene layer is formed as a single layer, double layer or 3-10 layer. USE - Graphene layer based position light sensitive detector. ADVANTAGE - The detector detects a weak light signal in an effective manner. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for manufacturing position light sensitive detector based on graphene layer. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of graphene layer based position light sensitive detector. '(Drawing includes non-English language text)'