• 专利标题:   Photoelectric detector based blackphosphate/graphene/molybdenum disulfide hetero-junction, has channel structure located between first and second electrodes that are connected with black phosphorus thin film layer and molybdenum layer.
  • 专利号:   CN111048619-A
  • 发明人:   ZHANG H, WANG H, GUO Z
  • 专利权人:   UNIV SHENZHEN
  • 国际专利分类:   H01L031/028, H01L031/032, H01L031/109, H01L031/18
  • 专利详细信息:   CN111048619-A 21 Apr 2020 H01L-031/109 202037 Pages: 15 Chinese
  • 申请详细信息:   CN111048619-A CN11026271 25 Oct 2019
  • 优先权号:   CN11026271

▎ 摘  要

NOVELTY - The hetero-junction has a first electrode and a second electrode that are fixed with a surface of a substrate. A channel structure is located between the first electrode and the second electrode. A black phosphorus thin film layer, a graphene layer and a molybdenum disulfide layer are laminated in the channel structure. The first electrode and the second electrode are connected with the black phosphorus thin film layer and the molybdenum layer. A self-repairing electrode is arranged on a surface of the first electrode and/or the second electrode. USE - Photoelectric detector based blackphosphate/graphene/molybdenum disulfide hetero-junction. ADVANTAGE - The hetero-junction is simple and easy to operate, and has high sensitivity, wide range of applications, small dark current and better responsiveness, and can realize high-sensitivity and wide-band photoelectric detection process. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a photoelectric detector based blackphosphate/graphene/molybdenum disulfide hetero-junction manufacturing method. DESCRIPTION OF DRAWING(S) - The drawing shows a top perspective view of a photoelectric detector based blackphosphate/graphene/molybdenum disulfide hetero-junction.