• 专利标题:   Selective graphene etching involves setting wavelength, power, and scanning path of laser, focusing through lens array, scanning area of substrate surface, completely etching away thin layer of graphene in area, and forming pattern.
  • 专利号:   CN110548996-A
  • 发明人:   GUAN Y, XIE J, QU F, LI N, ZHAO L, XIA Y
  • 专利权人:   INST MICROELECTRONICS CHINESE ACAD SCI
  • 国际专利分类:   B23K101/40, B23K026/064, B23K026/362, B23K026/70
  • 专利详细信息:   CN110548996-A 10 Dec 2019 B23K-026/362 201999 Pages: 7 Chinese
  • 申请详细信息:   CN110548996-A CN10557452 01 Jun 2018
  • 优先权号:   CN10557452

▎ 摘  要

NOVELTY - Selective graphene etching involves setting wavelength, power, and scanning path of laser, focusing the laser through a lens array to form a laser focusing spot, scanning a preset area of the substrate sample surface with the laser focusing spot, completely etching away a thin layer of graphene in the preset area on the surface of the substrate sample, and forming a pattern on the surface of the thin layer of graphene. USE - Selective graphene etching. ADVANTAGE - The method prevents damage, does not affect the performance of graphene, and enables complete etching of graphene film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for device for selective graphene etching.