▎ 摘　　要

NOVELTY - An integrated semiconductor device (100) is formed by forming first inter-layer dielectric (ILD) layer (106) over a semiconductor device (104, 108) that includes a first transistor structure; forming a two-dimensional (2D) material layer (110) over and in contact with the first ILD layer; patterning the 2D material layer to form a channel layer of a second transistor structure; forming a source electrode and a drain electrode of the second transistor structure over the patterned 2D material layer and laterally spaced apart from each other; forming a gate dielectric layer of the second transistor structure over the patterned 2D material layer, the source electrode, and the drain electrode; and forming a gate electrode of the second transistor structure over the gate dielectric layer and laterally between the source electrode and the drain electrode. USE - Formation of integrated semiconductor device. ADVANTAGE - By introducing a 2D material layer in the integrated semiconductor device as a channel layer of one or more of the semiconductor devices or structures utilizing low thermal budget process(es), the integrated semiconductor device can be made by using low thermal budget based processes without sacrificing the performance or degrading the semiconductor devices or structures. A three-dimensional (3D) semiconductor device, such as a FinFET, a gate-all-around (GAA) transistor, etc., may be made as a part of the integrated semiconductor device, and thus integrating a 3D semiconductor device to form an integrated semiconductor device is realizable. Moreover, the 2D material is beneficial for high transistor speed and power efficiency of the integrated semiconductor device because of its high mobility characteristics. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic structural view of an integrated semiconductor device. Integrated semiconductor device (100) Substrate (102) Semiconductor device (104, 108) ILD layer (106) Two-dimensional material layer (110)