▎ 摘　　要

NOVELTY - The electronic device i.e. non-volatile memory device (720) has a resistance switching layer (725) formed with a resistance value and changing the resistance value based on an illumination of irradiated light. The resistance switching layer maintains the changed resistance value. A gate is arranged on the resistance switching layer. A gate oxide layer (724) is formed between the resistance switching layer and the gate. A source (721) and a drain (722) on the switching layer are spaced apart from each other. A color filter is arranged on the switching layer. The gate includes a transparent conducting electrode (TCE) gate (723) above the resistance switching layer to transmit the irradiated light. The switching layer includes a two-dimensional (2D) material and three-dimensional (3D) material. The resistance switching layer is formed as a single-layer and a multi-layer. The gate oxide layer is formed as a multi-layer including a charge trapping layer. USE - Electronic device i.e. non-volatile memory device e.g. semiconductor memory device, for use in a memory system (claimed). Uses include but are not limited to cell phones, digital cameras, personal digital assistants (PDAs), mobile computers and fixed computers. ADVANTAGE - The electronic device makes a neural network to filter and output robust features for representing an entire image from an input image by repeatedly performing convolution operation and sub-sampling i.e. pooling, operation in multiple layers so as to derive a result of recognizing the input image through output final features. The electronic device can change the resistance value of the resistance switching layer due to that charges are trapped in internal defects of the resistance switching layer, so that the resistance value of the resistance switching layer can be maintained as a changed resistance value if light is not irradiated to the resistance switching layer. The electronic device reduces the resistance value of the resistance switching layer since the charges are trapped in the defect when the light is irradiated to the resistance switching layer of the non-volatile memory device. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a memory system. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a non-volatile memory device with phototransistor and memory characteristics. 720Non-volatile memory device 721Source 722Drain 723TCE gate 724Gate oxide layer 725Resistance switching layer