• 专利标题:   Nano thermoelectric active material for three dimensional flame electric fireplace, comprises silica, parylene, polytetrafluoroethylene, thermoelectric materials, carbon nanotubes, bismuth, antimony, porous materials and graphene.
  • 专利号:   CN111211217-A
  • 发明人:   ZHANG D, LI J, SHI Z, LIU J
  • 专利权人:   HUBEI RUOLIN ELECTRICAL TECHNOLOGY CO
  • 国际专利分类:   B22F009/04, B82Y030/00, B82Y040/00, C22C029/00, C23C016/00, C23C016/40, C25D005/00, H01L035/18, H01L035/22, H01L035/34
  • 专利详细信息:   CN111211217-A 29 May 2020 H01L-035/18 202054 Pages: 8 Chinese
  • 申请详细信息:   CN111211217-A CN10038031 14 Jan 2020
  • 优先权号:   CN10038031

▎ 摘  要

NOVELTY - Nano thermoelectric active material comprises 20-30pts. wt. silica, 10-20 pts. wt. parylene, 10-15 pts. wt. polytetrafluoroethylene, 5-20 pts. wt. thermoelectric materials, 10-20 pts. wt. carbon nanotubes, 10-20 pts. wt. bismuth, 10-20 pts. wt. antimony, 20-40 pts. wt. porous materials, 10-15 pts. wt. graphene, 6-10 pts. wt. copper powder and 10-15 pts. wt. semiconductor material. USE - Nano thermoelectric active material for three dimensional flame electric fireplace. ADVANTAGE - The nano thermoelectric active material has good thermal conductivity, reduces the energy loss of thermoelectric materials during thermoelectric conversion, the thermoelectric conversion effect is better, and more energy saving. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing nano thermoelectric active material, which involves: (A) adding bismuth telluride, antimony-doped bismuthtelluride and selenium-doped bismuth telluride; (B) performing impurity removal treatment; (C) melting the mixture; (D) injecting into the porous material and nanotubes under high pressure; (E) cooling at room temperature for 20 minutes to obtain nanowires; (F) placing nanowires, silicon dioxide, parylene and polytetrafluoroethylene in a chemical vapor deposition furnace for vapor deposition; (G) applying the mixture on the surface of the nanowires; (H) placing them at a temperature of 40 degrees C; (I) crushing graphene and copper into particles with a diameter of micrometers; (J) dispersing graphene powder and copper powder by grinding and dispersing method; (K) forming mixed film of graphene and copper on the surface of the nanowires by electroplating to complete the preparation; (L) cleaning the instruments used in the preparation process; (M) confirming that they are clean; and (N) storing spare.