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  • 专利标题:   Method for manufacturing graphene slurry based through silicon via filling material, involves utilizing graphene composite oily conductive paste as through-silicon via filling material.
  • 专利号:   CN110379768-A
  • 发明人:   YANG W, YE X, JIANG X
  • 专利权人:   UNIV HEFEI TECHNOLOGY
  • 国际专利分类:   H01B001/24, H01L021/768, H01L023/48, H01L023/535
  • 专利详细信息:   CN110379768-A 25 Oct 2019 H01L-021/768 201990 Pages: 8 Chinese
  • 申请详细信息:   CN110379768-A CN10665786 23 Jul 2019
  • 优先权号:   CN10665786

▎ 摘　　要

NOVELTY - A graphene slurry based through silicon via filling material manufacturing method involves utilizing a graphene composite oily conductive paste as a through-silicon via filling material. USE - Method for manufacturing graphene slurry based through silicon via filling material. ADVANTAGE - The method enables manufacturing graphene slurry based through silicon via filling material with better heat dispersion, in simple technique and cost effective manner.