• 专利标题:   Silicon-containing composite negative electrode material for lithium-ion battery, comprises conductive framework having porous structure, silicon distributed on surface of pore wall of porous structure and conductive anti-expansion film layer combined on surface of porous structure to cover silicon.
  • 专利号:   CN115642230-A
  • 发明人:   WANG K
  • 专利权人:   EVERGRANDE NEW ENERGY TECHNOLOGY SHENZHE
  • 国际专利分类:   H01M010/0525, H01M004/134, H01M004/36, H01M004/38, H01M004/62
  • 专利详细信息:   CN115642230-A 24 Jan 2023 H01M-004/36 202317 Chinese
  • 申请详细信息:   CN115642230-A CN10814089 19 Jul 2021
  • 优先权号:   CN10814089

▎ 摘  要

NOVELTY - Silicon-containing composite negative electrode material (2) comprises a conductive framework (1) having a porous structure, a silicon distributed on the surface of the pore wall of the porous structure and a conductive anti-expansion film layer combined on the surface of the pore wall of the porous structure to cover silicon. USE - Silicon-containing composite negative electrode material for use in lithium-ion battery (claimed). ADVANTAGE - The silicon-containing composite negative electrode material has a synergistic effect between the conductive skeleton and the conductive anti-expansion film layer, high conductivity and multiplying power performance, effective resistance of volume of expansion, improved the transmission rate of lithium ions and high capacity, structural stability and cycle performance during charge and discharging process, and provides lithium-ion battery with good rate performance, excellent cycle performance, long service life and stable electrochemical performance. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: 1. a method for preparing the silicon-containing composite negative electrode material, which involves: a. providing the conductive framework having porous structure; b. distributing silicon on the surface of the pore walls of the porous structure; and c. forming conductive anti-expansion film layer on the conductive skeleton so that the conductive anti-expansion film layer is bonded to the surface of the pore wall of the porous structure and covers the silicon; and 2. a negative electrode, which comprises a current collector and a silicon-based active layer bonded to the surface of the current collector, where the silicon-based active layer contains the silicon-containing composite negative electrode material. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of a silicon-containing composite material negative electrode. 2Silicon-containing composite negative electrode material 1Conductive framework