▎ 摘　　要

NOVELTY - A non-metallic substrate is placed in a clean plasma enhanced chemical vapor deposition reaction chamber, and vacuumized. The reaction chamber is heated at 400-900 degrees C, and precursor containing carbon and doping elements is added into the reaction chamber, such that the molar ratio of carbon atom and dopant atom is 1:10-1000:1. The plasma generator is then opened and reacted for 2-2000 minutes. The chamber is then cooled to room temperature to obtain graphene-doped non-metallic substrate surface. USE - Low-temperature synthesis of graphene-doped non-metallic surface (claimed). ADVANTAGE - The method efficiently provides high-quality graphene-doped non-metallic surface having excellent dielectric property, with high productivity. DETAILED DESCRIPTION - A non-metallic substrate is placed in a clean plasma enhanced chemical vapor deposition reaction chamber, and vacuumized. The reaction chamber is heated at 400-900 degrees C, and precursor containing carbon and doping elements is added into the reaction chamber, such that the molar ratio of carbon atom and dopant atom is 1:10-1000:1. The plasma generator is then opened and reacted for 2-2000 minutes. The chamber is then cooled to room temperature to obtain graphene-doped non-metallic substrate surface. The substrate is silica, silicon, graphene, hexagonal boron nitride, highly oriented pyrolytic graphite, alumina, mica, silicon nitride or boron nitride.