▎ 摘　　要

NOVELTY - Diode based on graphene/gallium oxide heterojunction has a heterojunction device with a vertical structure, which is an indium tin oxide (ITO) substrate 1, gallium oxide film 2, graphene film 3 and aluminum electrode layer 4, from the bottom to top. USE - Diode for semiconductors. ADVANTAGE - The diode has good chemical stability, controllable size, good rectification characteristics, high transparency and simple preparation method, and works at room temperature. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for preparing the diode, which involves: a. etching a substrate by selecting the ITO substrate as the base, covering the ITO substrate with a tape mask, and adding into a dilute hydrochloric acid solution for etching; b. preparing the substrate by carrying out wet cleaning on the ITO substrate, drying with a nitrogen spray gun and utilizing a high temperature resistant tape mask at the etching step; c. sputtering the gallium oxide film by using a radio frequency magnetron sputtering method to prepare the gallium oxide film on the ITO substrate; d. subjecting the substrate loaded with the gallium oxide film to annealing treatment; e. preparing a graphene film by using chemical vapor deposition method; f. transferring the graphene film to the substrate; and g. evaporating electrodes by sticking the prepared device on a mask plate and utilizing a vacuum evaporation apparatus to evaporate aluminum electrodes. DESCRIPTION OF DRAWING(S) - The drawing shows schematic view of the diode. 1ITO substrate 2Gallium oxide film 3Graphene film 4Aluminium electrode layer