▎ 摘　　要

NOVELTY - A thin-film device consists of a substrate layer, a lower electrode layer, germanium-antimony-tellurium material layer (g1), a molybdenum disulfide layer, germanium-antimony-tellurium material layer (g2), a graphene layer, an electrode layer (e1) and a protective layer, in order. Each of layer (g1) and layer (g2) is an ionically doped germanium-antimony-tellurium phase-change material layer. Layer (g2) is pure-phase germanium-antimony-tellurium material phase-change material. USE - Thin-film device (claimed). ADVANTAGE - The thin-film device has excellent thermal stability and durability.