▎ 摘　　要

NOVELTY - Preparation of structured graphene based on chlorine (Cl2) reaction includes growing one layer of carbonization zone on silicon (Si) substrate; growing cubic silicon carbide (3C-SiC) thin film with air source of propane (C3H8) and silane (SiH4); depositing one layer of silicon dioxide (SiO2) on the surface of 3C-SiC thin film and carving graphics window on SiO2; reacting the exposed 3C-SiC after opening window with Cl2 and generating carbon film; placing the generated carbon film in argon (Ar) gas; annealing; and making the carbon film form structured graphene at the window. USE - Preparation of structured graphene (claimed) used for making microelectronic device. ADVANTAGE - The method solves the prior art problems of uneven number of layers and low electron mobility of the prepared graphene. It provides structured graphene having smooth surface and low porosity. DETAILED DESCRIPTION - Preparation of structured graphene based on Cl2 reaction comprises: (A) standard washing 4-12-inch Si substrate; (B) placing the washed Si substrate into chemical vapor deposition (CVD) system reaction chamber; and vacuumizing the reaction chamber at 10-7 mbar; (C) gradually raising the temperature in the reaction chamber to carbonization temperature of 950-1150 degrees C; passing C3H8 at 30 standard cm3/minute (sccm); carbonizing the substrate for 3-7 minutes; and growing one layer of carbonization zone; (D) heating the reaction chamber to growth temperature of 1150-1300 degrees C; passing C3H8 and SiH4; processing heteroepitaxial growth for 3C-SiC thin film; controlling the growing time within 36-60 minutes; gradually decreasing the temperature to room temperature under hydrogen (H2) protection; and completing the growth of 3C-SiC thin film; (E) depositing one layer of SiO2 having thickness of 0.5-1 mu m on the surface of 3C-SiC thin film by plasma enhanced chemical vapor deposition (PECVD) method; (F) coating one photoresist layer on the surface of a mask; and carving graphics window on the mask of the same shape with the parts needed to be prepared; exposing the 3C-SiC; and forming the structured graphics; (G) placing the sample sheet after opening the window into a quartz tube; and heating at 700-1050 degrees C; (H) passing the mixed gas of Ar and Cl2 into the quartz tube; keeping for 3-5 minutes; reacting Cl2 with the 3C-SiC; and generating the carbon film; and (I) placing the generated carbon film into the Ar gas; annealing for 10-25 minutes at 1000-1100 degrees C; and making the carbon film form structured graphene at the window.