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  • 专利标题:   Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial, is embedded with seed crystals containing seeds oriented in preset direction or seed crystals single crystallized in preset direction.
  • 专利号:   WO2021080276-A1, KR2021047114-A, KR2312729-B1, KR2022014161-A
  • 发明人:   PARK H B, ROH J S, JANG J K, CHANG J K
  • 专利权人:   UNIV HANYANG IND COOP FOUND, UNIV HANYANG IUCFHYU
  • 国际专利分类:   B82Y040/00, C30B001/02, C30B001/04, C30B029/02, H01B005/14, C10B029/02, C01B032/186, C30B011/00, C30B011/14, C30B029/64
  • 专利详细信息:   WO2021080276-A1 29 Apr 2021 202145 Pages: 43
  • 申请详细信息:   WO2021080276-A1 WOKR014289 20 Oct 2020
  • 优先权号:   KR130795, KR093904

▎ 摘　　要

NOVELTY - A single crystal metal film is embedded with seed crystals containing seeds oriented in (111) direction or seed crystals which are single crystallized in (111) direction. USE - Single crystal metal film for conductive film and substrate for growth of two-dimensional nanomaterial e.g. single or multi-layered graphene (all claimed) for electronic and optical devices. ADVANTAGE - The metal film has high solidity irrespective of the thickness and shape of the polycrystalline metal precursor. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) production of the metal film using polycrystalline metal precursor; and (2) manufacture of a large area single-layered graphene.