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  • 专利标题:   Manufacture of gate dielectric thin film on graphene surface involves introducing graphene into molecular beam epitaxy chamber kept at preset temperature and pressure, and passing metal vapor stream and oxidant gas stream.
  • 专利号:   CN102856185-A, CN102856185-B
  • 发明人:   SHEN D, WANG H, XIE X, YANG X, ZHANG Y
  • 专利权人:   CHINESE ACAD SCI SHANGHAI MICROSYSTEM, SHANGHAI MICROSYSTEM INFORMATION INST
  • 国际专利分类:   H01L021/28, H01L021/283
  • 专利详细信息:   CN102856185-A 02 Jan 2013 H01L-021/28 201327 Pages: 9 Chinese
  • 申请详细信息:   CN102856185-A CN10385259 11 Oct 2012
  • 优先权号:   CN10385259

▎ 摘　　要

NOVELTY - A graphene is introduced into molecular beam epitaxy chamber kept at preset pressure and preset temperature. To chamber, metal vapor beam and oxidant gas stream is passed, to deposit a metal oxide film on graphene surface. USE - Manufacture of gate dielectric thin film. ADVANTAGE - The method enables manufacture of gate dielectric thin film having excellent thermal conductivity and quality, and uniform thickness.