▎ 摘　　要

NOVELTY - The thin film transistor comprises a channel region, a source electrode (420) and drain electrode (440), where the channel region and the electrodes are made of a material (100). The channel region is electrically connected between the electrodes. The electrodes include a self-assembled monolayer (SAM) (200) and a graphene layer (300) formed on the SAM. The SAM has hydrophobicity, and comprises alkyl group with carbon number of (1-30) and an alkyl silane compound. The transistor transfers graphene manufactured by a chemistry deposition method on the hydrophobicity SAM. USE - Used as a thin film transistor. ADVANTAGE - The thin film transistor effectively screens the charged impurity generated in the SAM, and exhibits improved electrical property. DETAILED DESCRIPTION - The thin film transistor comprises a channel region, a source electrode (420) and drain electrode (440), where the channel region and the electrodes are made of a material (100). The channel region is electrically connected between the electrodes. The electrodes include a self-assembled monolayer (SAM) (200) and a graphene layer (300) formed on the SAM. The SAM has hydrophobicity, and comprises alkyl group with carbon number of (1-30) and an alkyl silane compound. The transistor transfers graphene manufactured by a chemistry deposition method to the hydrophobicity SAM. The material is metal oxide material, semiconductor substrate material, glass fabric and/or plastic substrate phosphorus material. An INDEPENDENT CLAIM is included for a method for preparing a thin film transistor. DESCRIPTION OF DRAWING(S) - The figure shows a perspective view of a thin film transistor. Material (100) SAM (200) Graphene layer (300) Source electrode (420) Drain electrode. (440)