▎ 摘　　要

NOVELTY - The method involves defining an active region of a graphene FET. The source/drain contact regions are graphically defined to form source/drain contact electrodes. The metal oxide is formed as a gate dielectric layer (4). The photolithographic patterning is performed on a local region of the channel. The total length of each of the layer of metal is denoted and the work functions of metals are recorded. The distance between the two lateral resistance peaks in the M-shaped resistance characteristic curve is controlled, by adjusting the difference between the work functions, and the relative heights of the two longitudinal resistance peaks in the M-shaped resistance characteristic curve are controlled by adjusting the ratio of the total length of layer of metal. USE - Method for regulating M-shaped resistance characteristic curve of graphene FET. ADVANTAGE - The graphene FET structure can generate M-shaped resistance characteristic curve, and the controllable adjustment of the shape of the M-shaped resistance characteristic curve can be achieved by controlling the type and relative length of the two gate metals. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic view of a device structure of a graphene FET. Insulating substrate (1) Graphene (2) Source/drain contact metal (3) Gate dielectric layer (4) Vapor-deposited gate metals (5,6)