▎ 摘　　要

NOVELTY - Vertically growing graphene on the substrate by vapor deposition method, comprises (i) depositing catalytic metal layer on the surface of substrate; (ii) placing into chemical vapor deposition reaction furnace, vacuumizing, heating, passing into mixed gas and inert gas, and decomposing the carbon based gaseous reactant; (iii) placing the substrate in presence of electric field; (iv) reducing the substrate temperature, precipitating, and forming graphite thin film; (v) epitaxially growing the substrate; and (vi) heating reaction furnace, electrically processing, etching, and increasing quality. USE - The method is useful for vertically growing graphene on the substrate by vapor deposition method (claimed). ADVANTAGE - The method: can be processed through different stages of applied electric field strength; controls the temperature for controlling the growing direction of the graphene; and achieves the graphene vertical growth controllability. DETAILED DESCRIPTION - Vertically growing graphene on the substrate by vapor deposition method, comprises (i) selecting a substrate with thickness of 25-200 mu m, and depositing at least one layer of metal film as a catalytic metal layer on the surface of the substrate, where the deposition thickness is 100-500 nm; (ii) placing the catalytic metal layer deposited substrate into a chemical vapor deposition reaction furnace, vacuumizing, heating the substrate to 1000-1200 degrees C, passing into a mixed gas of at least one carbon-based gaseous reactant and a carrier gas, and an inert gas, forming a plasma, and decomposing the carbon based gaseous reactant at high temperature by a metal catalyst to obtain carbon atoms and charged active groups; (iii) placing the substrate in presence of an electric field to provide enough energy to electrically vertical substrate plane, where bombardment of carbon-based gaseous ion on the substrate occurs due to the electric field, and dissolving carbon element in the catalytic metal layer; (iv) reducing the substrate temperature to 600-1000 degrees C, reducing the carbon solubility of the catalytic metal layer along with the reducing temperature, supersaturating and precipitating the metal surface, and forming a graphite thin film on the surface the catalytic metal layer; (v) maintaining the substrate temperature at more than 800 degrees C, reducing the vertical electric field strength of the substrate surface, when the carbon-based gas ion groups are vertical to the substrate in presence of the electric field, epitaxially growing the substrate with catalytic metal layer to obtain vertical graphene; and (vi) heating the reaction furnace to 1000-1200 degrees C, electrically processing under the atmosphere of argon, hydrogen and ammonia, etching sp2 and sp3 hybrid of amorphous carbon film, and increasing the quality of the graphene surface.