▎ 摘　　要

NOVELTY - Preparing zinc sulfide based nanowire/graphene heterojunction photodetector involves: (1) preparing and transferring graphene by cleaning a copper foil, growing graphene by chemical vapor deposition method in a tubular furnace, spin coating a layer of polymethylmethacrylate (PMMA) on graphene/copper foil, baking, putting PMMA/graphene/copper foil into a ferric chloride solution, etching away the foil, cleaning the etched PMMA/graphene with deionized water, removing ferric chloride and impurities, then soaking in dilute hydrochloric acid to remove ferric chloride, rinsing, using silicon dioxide/silicon to take out graphene/PMMA, air drying, and annealing to obtain graphene/silicon dioxide/silicon; (2) evaporating zinc sulfide material and gold material; (3) adding zinc sulfide powder and gold/zinc sulfide/graphene/silicon dioxide/silicon to the tubular furnace, and growing zinc sulfide nanowire film by physical vapor deposition method; and (4) performing light response test. USE - The method is useful for preparing zinc sulfide based nanowire/graphene heterojunction photodetector. ADVANTAGE - The method provides zinc sulfide based nanowire/graphene heterojunction photodetector with high conductivity, and adopts the electron-hole pair generated by the photodetector made of zinc sulfide nanowires after absorbing light, which is more conducive to transfer to graphene, thus effectively improving the photoelectric performance such as switching ratio and responsivity. DETAILED DESCRIPTION - Preparing zinc sulfide based nanowire/graphene heterojunction photodetector involves: (1) preparing and transferring graphene by cleaning a copper foil, growing graphene by chemical vapor deposition method in a tubular furnace, spin coating 100 mg/ml layer of polymethylmethacrylate (PMMA) on graphene/copper foil, baking on a heating table, putting PMMA/graphene/copper foil into a 5 mol/l ferric chloride solution, etching away the copper foil, cleaning the etched PMMA/graphene with deionized water, removing ferric chloride and impurities, then soaking in dilute hydrochloric acid to further remove ferric chloride, rinsing with deionized water, using silicon dioxide/silicon to take out graphene/PMMA, air drying, and annealing at low-pressure to remove glue to obtain graphene/silicon dioxide/silicon; (2) evaporating zinc sulfide material and gold material by coating a graphene mask on both ends of the graphene/silicon dioxide/silicon, leaving a 2 mm wide area for coating, fixing the sample on an evaporation substrate in a cavity of an electron beam evaporation coating machine and using an electron beam evaporation coating method to evaporate zinc sulfide and gold on the graphene/silicon dioxide/silicon; (3) growing zinc sulfide nanowire film by adding 0.5 g zinc sulfide powder and gold/zinc sulfide/graphene/silicon dioxide/silicon to the tubular furnace, and growing zinc sulfide nanowire film by physical vapor deposition method; and (4) performing light response test by using UV light.