• 专利标题:   Method for preparing gas sensor used for detecting benzene gas, involves forming source electrode and drain electrode formed on sensitive material layer by optimizing oxidation degree of sensitive layer to increase sensitivity of gas sensor, and performing post-treatment for gas sensor.
  • 专利号:   CN115308269-A
  • 发明人:   WANG Y, CUI H, LI T, SONG J
  • 专利权人:   SHANGHAI INST MICROSYSTEM INFORMATION
  • 国际专利分类:   G01N027/12
  • 专利详细信息:   CN115308269-A 08 Nov 2022 G01N-027/12 202296 Chinese
  • 申请详细信息:   CN115308269-A CN10937290 05 Aug 2022
  • 优先权号:   CN10937290

▎ 摘  要

NOVELTY - The method involves providing a substrate. A combined buffer layer (23) is prepared on the substrate. The buffer layer is composed of a simple stack graphene buffer layer and an organic flexible insulating layer. A sensitive material layer (4) is prepared on a top portion of the organic flexible insulation layer. A source electrode (5) and a drain electrode (6) formed on the sensitive material layer by optimizing an oxidation degree of the sensitive layer to increase sensitivity of a gas sensor. Post-treatment is performed for the gas sensor. USE - Method for preparing a gas sensor used for detecting benzene gas. ADVANTAGE - The method enables preparing the gas sensor that has strong bending resistance and sensitivity by optimizing the degree of oxidation of the layer of sensitive material. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of a gas sensor. 1Ultraviolet ozone 2Graphene buffer layer 3Flexible buffer layer 4Sensitive material layer 5Source electrode 6Drain electrode 23Combined buffer layer