▎ 摘　　要

NOVELTY - The FET has main portion that is provided with gate region, source region, drain region, channel region and source/drain semiconductor doped region. The dielectric material is composed of hafnium oxide (Hf02), hafnium silicate (HfSiO), nitrided hafnium silicates (HfSiON), hafnium tantalum oxide (HfTaO), hafnium titanium oxide (HfTiO), hafnium zirconium oxide (HfZrO), alumina (A1203), lanthanum oxide (La203), zirconium oxide (Zr02), lanthanum aluminum oxide (LaAlO). The drain region is composed of aluminum, copper and metal material. USE - Enhanced type graphene FET for integrated circuit. ADVANTAGE - The component structure of the enhanced type graphene FET can be simplified. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the Enhanced type graphene FET.