▎ 摘　　要

NOVELTY - Manufacture of invisible semiconductor device involves sequentially forming a sacrificial layer, an epitaxial layer and a nano-column array on the epitaxial substrate, where the insulating layer and the nano- column array include III-V group semiconductor material, setting at least an insulating material layer covering the nano column array, and processing at least one window on the insulation layer, exposing at least a portion of the nano columns from the window, providing a first electrode on the window of the insulation layer, and the first electrode is electrically connected to the nanosheet exposed from the windows, the second electrode is a transparent electrode, and setting a second electrode on a region other than the window is provided on the insulator layer, so as to form an invisible semiconducting device. USE - As invisible semiconductor device used in e.g. invisible airplanes, hidden clothes, military and civil fields, and for illumination, image display, missile detection, fire detection, radiation detection and secret communication. ADVANTAGE - The invisible semiconductor device has a long service life, and has a vertical nano-column array, so as to release the epitaxial stress and improve the crystal quality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for an invisible semiconductor device, which comprises substrate, an epitaxial layer, a nano-column array set on the epitaxial layer, an insulating material layer set on the surface of the nano-column array and a first electrode, and a second electrode. DESCRIPTION OF DRAWING(S) - GaN epitaxial layer (11) Indium gallium zinc nano-column (13) Silicon oxide layer (20) Graphene electrode (30) Ni/Au electrode (50)