• 专利标题:   Manufacture of graphite thin film for integrated devices, involves arranging substrate in process chamber, pressure-reducing chamber, supplying decomposed hydrocarbon gas on substrate, and forming layer of graphene on substrate.
  • 专利号:   JP2010269944-A, JP5399772-B2
  • 发明人:   MAEDA F, HIBINO H
  • 专利权人:   NIPPON TELEGRAPH TELEPHONE CORP, NIPPON TELEGRAPH TELEPHONE CORP
  • 国际专利分类:   C01B031/04
  • 专利详细信息:   JP2010269944-A 02 Dec 2010 C01B-031/04 201080 Pages: 13 Japanese
  • 申请详细信息:   JP2010269944-A JP120636 19 May 2009
  • 优先权号:   JP120636

▎ 摘  要

NOVELTY - A substrate (101) is arranged inside a process chamber (102), and the chamber is pressure-reduced to the pressure of molecular flow area. A hydrocarbon gas is decomposed by passing through a decomposition unit consisting of a filament which heats the gas by application of voltage inside the process chamber and sends on the substrate. A layer of graphene is then formed on the surface of substrate, to obtain a graphite thin film. USE - Manufacture of graphite thin film for integrated devices e.g. large-scale integrations. ADVANTAGE - The method enables manufacture of graphite thin films under growth conditions of high freedom degree. The formed graphene layer has high quality and reduced defects. The number of layers per atomic layer can be controlled accurately. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacturing apparatus of graphite thin film, consisting of a process chamber, an exhausting unit (103), a gas supplier (104), and a decomposition unit (105). DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of the manufacturing apparatus of graphite thin film. (Drawing includes non-English language text) Substrate (101) Process chamber (102) Exhausting unit (103) Gas supplier (104) Decomposition unit (105)