• 专利标题:   Method for preparing graphene top electrode for semiconductor device, involves transferring graphene to polydimethylsiloxane, laminating graphene to organic functional layer followed by tightly adhering graphene on polydimethylsiloxane.
  • 专利号:   CN108155297-A
  • 发明人:   QIN G, YAO L, XIE X, LI L
  • 专利权人:   UNIV PEKING
  • 国际专利分类:   H01L051/52, H01L051/56
  • 专利详细信息:   CN108155297-A 12 Jun 2018 H01L-051/52 201845 Pages: 8 Chinese
  • 申请详细信息:   CN108155297-A CN11100965 05 Dec 2016
  • 优先权号:   CN11100965

▎ 摘  要

NOVELTY - A graphene top electrode preparing method involves transferring the graphene to polydimethylsiloxane by wet or dry transfer method. The graphene transferred to the polydimethylsiloxane is laminated to the organic functional layer of the semiconductor device together with the polydimethylsiloxane followed by tightly adhering graphene on the polydimethylsiloxane by Van der Waals force to the organic functional layer as the top electrode of the device. USE - Method for preparing graphene top electrode for a semiconductor device. ADVANTAGE - The method enables preparing graphene top electrode in simple, convenient, and cost effective manner.