• 专利标题:   Method for forming patterned graphene layer on substrate of electronic device, involves removing patterned structure to produce patterned graphene layer on substrate, where patterned graphene layer on substrate provides carrier mobility.
  • 专利号:   US2015279677-A1, US9646833-B2
  • 发明人:   AFZALIARDAKANI A, MAAROUF A, MARTYNA G J, SAENGER K
  • 专利权人:   INT BUSINESS MACHINES CORP, EGYPT NANOTECHNOLOGIES CENT EGNC, EGYPT NANOTECHNOLOGIES CENT
  • 国际专利分类:   H01L021/02, H01L021/04, H01L021/324, B32B015/20, B32B003/00, B32B003/12, B32B009/00, B32B009/04, B82Y030/00, B82Y040/00, C01B031/04, C23F001/02, H01B013/00
  • 专利详细信息:   US2015279677-A1 01 Oct 2015 H01L-021/04 201568 English
  • 申请详细信息:   US2015279677-A1 US699455 29 Apr 2015
  • 优先权号:   US310885, US699455

▎ 摘  要

NOVELTY - The method involves forming a patterned structure (403) on a substrate i.e. insulating substrate. A layer of graphene (408) is applied on a top of the patterned structure on the substrate. The layer of graphene on top of the patterned structure is heated to remove graphene regions proximate to the patterned structure. The patterned structure is removed to produce a patterned graphene layer on the substrate, where the patterned graphene layer on the substrate provides carrier mobility for electronic devices. USE - Method for forming a patterned graphene layer on a substrate of an electronic device. ADVANTAGE - The method enables facilitating production of carbon-containing volatiles that are more completely removed from a reaction area than carbon remaining in metal nanodot. The method enables patterning the patterned structure of a carbide-forming metal or metal-containing alloy lithographically by deposition or etching through a mask. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a technique for forming a patterned graphene layer. Nickel layer (402) Patterned structure (403) Silicon oxide layer (404) Silicon layer (406) Graphene (408)