▎ 摘　　要

NOVELTY - The method involves forming a patterned structure (403) on a substrate i.e. insulating substrate. A layer of graphene (408) is applied on a top of the patterned structure on the substrate. The layer of graphene on top of the patterned structure is heated to remove graphene regions proximate to the patterned structure. The patterned structure is removed to produce a patterned graphene layer on the substrate, where the patterned graphene layer on the substrate provides carrier mobility for electronic devices. USE - Method for forming a patterned graphene layer on a substrate of an electronic device. ADVANTAGE - The method enables facilitating production of carbon-containing volatiles that are more completely removed from a reaction area than carbon remaining in metal nanodot. The method enables patterning the patterned structure of a carbide-forming metal or metal-containing alloy lithographically by deposition or etching through a mask. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a technique for forming a patterned graphene layer. Nickel layer (402) Patterned structure (403) Silicon oxide layer (404) Silicon layer (406) Graphene (408)