• 专利标题:   Adjustable multi-frequency terahertz perfect absorber has single layer graphene covered with hollow gold electrode, and side gold electrode placed on ion glue layer and respectively connected with anode and cathode of direct current power supply.
  • 专利号:   CN115249896-A
  • 发明人:   KONG W, ZHANG K
  • 专利权人:   UNIV QINGDAO
  • 国际专利分类:   H01Q015/00, H01Q017/00
  • 专利详细信息:   CN115249896-A 28 Oct 2022 H01Q-015/00 202295 Chinese
  • 申请详细信息:   CN115249896-A CN11649880 30 Dec 2021
  • 优先权号:   CN11649880

▎ 摘  要

NOVELTY - Absorber comprises a terahertz wave incident direction sequentially provided with a single layer graphene, an ion glue layer, first distribution Bragg reflector (3), first medium layer, second distribution Bragg reflector (5), second medium layer and a vanadium dioxide layer (7) from up to down. The first distribution Bragg reflector and the second distribution Bragg reflector are alternately provided with N groups of silicon dioxide film (8) and silicon film (9). The single layer graphene is covered with a hollow gold electrode. A side gold electrode is placed on the ion glue layer and respectively connected with an anode and a cathode of a direct current power supply. USE - Adjustable multi-frequency terahertz perfect absorber. ADVANTAGE - The adjustable multi-frequency terahertz perfect absorber can realize perfect absorption of three frequency bands. By changing the film layer number of the absorber, can change the distance of three absorption peak working frequency. By adjusting the voltage of the power supply, can realize the active control of the working frequency and by controlling the environment temperature and voltage at the same time, it can realize control of absorption frequency band number from 0 to 3, and by changing the angle of the incident light, realizes the synchronous control of 3 absorption peak work frequency. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the adjustable multi-frequency terahertz perfect absorber. 1Single-layer graphene layer 2First absorber layer 3First distribution bragg reflector 4First silicon dioxide layer 5Second distribution bragg reflector 6Second silicon dioxide layer 7Vanadium dioxide layer 8Silicon dioxide film 9Silicon film