▎ 摘　　要

NOVELTY - The transistor has an electron emitter region, an electron collection region, and a base region in which the base region has a sheet of graphene, and in which the base region is intermediate the electron injection region and the electron collection region and forms electrical interfaces. The graphene is doped, and doping increases the graphene to semiconductor hetero-junction barrier height and lowers the base resistance. Ohmic contact resistance to the electron emitter region is less than 0.00001 ohm-squared centimeter. USE - Graphene base transistor with reduced collector area. ADVANTAGE - Reduces capacitance of base graphene material layer to collector or emitter in third region or reduces capacitance to subcollector or to substrate by the graphene base with lateral side portions on dielectric material with low dielectric constant in the third region right and left side material layer. Reduces transit time of electrons through the base region and reduces energy loss of hot electrons in transiting the thin graphene base material since high electrical conductivity of graphene allows the use of thin base graphene material layer. Reduces thermal resistance since enhanced lateral thermal conductivity of graphene can spread the thermal load to a larger area. DETAILED DESCRIPTION - Electron collection region is of material selected from the group of aluminum gallium nitride, gallium nitride, indium aluminum nitride, and silicon carbide. An INDEPENDENT CLAIM is also included for a making method of graphene base transistor with reduced collector area. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram of a graphene base transistor with reduced collector area.