▎ 摘　　要

NOVELTY - Method for growing high-quality aluminum nitride film on a heterogeneous substrate, involves growing graphene thin film on the substrate; performing plasma treatment on the graphene film, and making the surface of graphene film with a large number of hanging keys; depositing the metal-organic chemical vapor deposition surface of the aluminum-nitride thin film; annealing the graphene surface with high-temperature anneal at a high temperature to obtain a flat structure surface with a low dislocation density;and subjecting the graphene thin membrane to high temperature annealing to obtain an aluminum-aluminum nitride thin membrane. USE - The method is used for growing high quality aluminum nitride film on heterogeneous substrate for manufacturing of optoelectronic device such as LED. ADVANTAGE - The method is simple in process, and is suitable for the application in the field of aluminium nitride film growth and photoelectric device and electronic device manufacturing field. The method uses the graphene layer grown on the heterogeneous substrate as growing aluminum nitride thin film to extend the aluminum nitridate thin film, which effectively improves the metal atom growth process in the transverse migration rate of the substrate surface the aluminum-nitride fast covering substrate to form a thin film. The aluminum nitrides/graphene/substrate structure is used for high temperature annealing to obtain the smooth surface flat and good crystal quality of the aluminium nitride film. DESCRIPTION OF DRAWING(S) - The drawing shows schematically shows a flowchart of the growing method of high quality aluminum nitride film on heterogeneous substrate (Drawing includes non-English language text).