▎ 摘　　要

NOVELTY - The method involves determining incident intensity ratio corresponding to second incident intensity divided by first incident intensity. The reflected intensity ratio is determined for location corresponding to second reflected intensity divided by first reflected intensity. The reflected intensity ratio map is generated for saturable absorber by determining reflected intensity ratios for locations on saturable absorber. The reflected intensity ratio is compared to incident intensity ratio to identify defects at locations. USE - Method for detecting defects in sample using saturable absorber such as graphene, carbon nano-tube, semiconductor, and metal (all claimed). ADVANTAGE - The process for detecting defects in sample using saturable absorber can quickly identify the cracks and voids in graphene films in efficient manner. DETAILED DESCRIPTION - The absence of defects is identified at location in which reflected intensity ratio is greater than incident intensity ratio, on the saturable absorber. The reflected intensity ratio map is provided as an image of the defects. The incident intensity ratio is provided as predetermined value. The first and second incident intensities of the electromagnetic radiation are provided with specific average value. The electromagnetic radiation is provided with specific wavelength and provided as monochromatic. The electromagnetic radiation is provided by a laser, a light emitting diode, a xenon lamp, and a microwave source. The third reflected intensity of saturable absorber is acquired for the location under dark field electromagnetic radiation at third incident intensity. The corrected processed intensity is computed according to the predetermined formula. The first and second reflected intensities are acquired by employing dimensional charge coupled device, linear charge coupled device, two dimensional complementary metal-oxide-semiconductor device, linear complementary metal-oxide-semiconductor device, and photomultiplier tube. The first and second reflected intensities are acquired by raster scanning, line scanning, staring array imaging, con-focal imaging, and time-domain imaging. The saturable absorber is provided as planar. The defect look-up-table is employed to identify defects at locations on the saturable absorber. The location of defect in substrate (304) is inferred from location of detected defect on the saturable absorber. The saturable absorber is located on a substrate that includes metal, semiconductor, ceramic, or polymer. INDEPENDENT CLAIMS are included for the following: (1) a computer-readable storage medium storing program for detecting defect in sample using saturable absorber, includes instructions for controlling illumination source (432) to selectively direct bright field electromagnetic radiation at first incident intensity to location on the saturable absorber at sample stage. The imaging device is controlled to acquire first reflected intensity of the saturable absorber for the location under bright field electromagnetic radiation at the first incident intensity. The illumination source is controlled to selectively direct bright field electromagnetic radiation at second incident intensity to the location on the saturable absorber. The second incident intensity is greater than the first incident intensity by the amount sufficient to saturate the absorbance value of the saturable absorber. The imaging device is controlled to acquire a second reflected intensity of the saturable absorber for the location under bright field electromagnetic radiation at the second incident intensity. The incident intensity ratio is determined corresponding to the second incident intensity divided by the first incident intensity. The reflected intensity ratio is determined for the location corresponding to the second reflected intensity divided by the first reflected intensity. The reflected intensity ratio map is generated for the saturable absorber by determining reflected intensity ratios for locations on the saturable absorber. The reflected intensity ratio map is provided as image of defects in the saturable absorber. The reflected intensity ratio is compared to the incident intensity ratio to identify defects at locations. The absence of defects is identified at location on the saturable absorber. The defect look-up-table is employed to identify defects at locations on the saturable absorber. The illumination source is controlled to selectively direct dark field electromagnetic radiation at third incident intensity to the location on the saturable absorber. The imaging device is controlled to acquire third reflected intensity of the saturable absorber for the location under dark field electromagnetic radiation at the third incident intensity. The processed intensity and corrected processed intensity are computed from the first, second and third reflected intensities according to the predetermined formulae; and (2) a system for detecting defect in sample using saturable absorber, has a sample stage which is configured to hold a sample. A microprocessor is coupled to the sample stage, the illumination source, and the imaging device. The microprocessor is configured through machine executable instructions to control the illumination source to selectively direct bright field electromagnetic radiation at first incident intensity to location on the saturable absorber at the sample stage. The imaging device is controlled to acquire second reflected intensity of the saturable absorber for the location under bright field electromagnetic radiation at the second incident intensity. The illumination source is controlled to selectively direct dark field electromagnetic radiation at third incident intensity to the location on the saturable absorber at the sample stage. The imaging device is controlled to acquire a third reflected intensity of the saturable absorber for the location under dark field electromagnetic radiation at the third incident intensity. The illumination source is provided with laser, light emitting diode, xenon lamp, and microwave source. The sample manipulator is operatively coupled to microprocessor and configured to place the saturable absorber on substrate. The microprocessor is configured through the machine executable instructions to control the sample manipulator to manipulate the saturable absorber. A heater is operatively coupled to the microprocessor and the sample stage. The microprocessor is configured through machine executable instructions to control the heater to heat the saturable absorber at the sample stage. DESCRIPTION OF DRAWING(S) - The drawing shows a side view of the scanning apparatus. Substrate (304) Sample holder (405) Illumination source (432) Detector (434) Translation/rotation mechanism (438)