▎ 摘　　要

NOVELTY - Preparation of graphene involves drying surface of silicon substrate, placing in a vacuum chamber using a cathode vacuum arc deposition device, depositing amorphous carbon film on the surface of substrate in pulse frequency of 330-370 KHz, pulse width of 0.9-1.2 mu S and deposition time of 1-10 minutes such that vacuum degree of film deposition vacuum chamber is 3x 10-3 Pa or less, passing argon gas having pressure of 15-25 sccm in the arc flow of 55-60 A, applying pulse negative bias of -300 V to -350 V to substrate, rinsing amorphous carbon film on substrate with high-purity nitrogen gas gun, forming metal catalyst film on surface of amorphous carbon film by electron beam evaporation, vacuumizing at the pressure of 2x 10-3 Pa or less and electron gun power of 8-20 W, vacuum annealing furnace to evacuate, increasing temperature of furnace to 450-500 degrees C, placing sample of silicon/amorphous carbon/metal catalyst, heat-preserving for 15-20 minutes, and air-cooling. USE - Preparation of graphene. ADVANTAGE - The method efficiently and economically provides graphene by simple method at low annealing temperature. DETAILED DESCRIPTION - The target in cathode vacuum arc deposition device is high-purity graphite target. The amorphous carbon film has thickness of 2-30 nm.