▎ 摘　　要

NOVELTY - The graphene gas sensor has a CMOS device that comprises a ring oscillator circuit A location (302) is configured for connecting monolayer graphene channels to the ring oscillator circuit at a surface of the CMOS device. A monolayer graphene channel is formed at each of the locations, respectively. The electrical contacts are formed between each end of each of the monolayer graphene channels and interconnect vias formed in the CMOS device. The CMOS device comprises a metallic pad at each of the locations underlying the monolayer graphene channel. USE - Graphene gas sensor for gas sensing applications. ADVANTAGE - The gas sensor is coupled with back-end CMOS amplification and analysis circuitry also provides advantages from tighter system integration, which can improve functionality and lower power consumption and cost. The monolayer graphene integrated with a semiconductor device can be fabricated with relatively few post-CMOS processing steps for relatively simple and low cost fabrication. The integrated monolayer graphene semiconductor device is reduced in scope, which is desirable and economically beneficial. The overall yields for integration of monolayer graphene with a semiconductor device can be improved. The metallization pads are added at the location of the monolayer graphene channels to improve planarity and reliability of the semiconductor processing involved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method of preparing a gas sensor. DESCRIPTION OF DRAWING(S) - The drawing shows a micrograph view of the CMOS device. Location (302) Alignment mark (304)