▎ 摘　　要

NOVELTY - Production of low-temperature growing graphene (606) involves placing a substrate (602) with a layer of cobalt deposited in a plasma enhanced chemical vapor deposition (PECVD) chamber, providing a carbon precursor gas to the PECVD chamber, generating plasma at 350-800 degrees C to decompose the carbon precursor gas to thereby deposit carbon atoms on the cobalt layer, enabling a several of carbon atoms to diffuse through the cobalt layer thereby growing graphene on top of the cobalt layer and in between the substrate and the cobalt layer, removing carbon atoms from top of the cobalt layer, and removing the cobalt layer which is annealed after deposition prior to placement in the PECVD chamber. The graphene is growing at low-temperature on a substrate. USE - Production of low-temperature growing graphene used for semiconductor, electronic and optoelectronic applications. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of substrate/graphene after etching of the top graphene and cobalt layer. Substrate/graphene (600) Substrate (602) Graphene (606)