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  • 专利标题:   Transparent electrode graphene film preparing method, involves arranging p-type and n-type gallium nitride layers on LED epitaxial wafer, and removing impurities on graphene film and indium tin oxide thin layer by photo-etching process.
  • 专利号:   CN103078036-A, CN103078036-B
  • 发明人:   SUN J, MAO M, XU K, XU C, DENG J, ZHENG L, XIE Y, ZHU Y
  • 专利权人:   UNIV BEIJING TECHNOLOGY
  • 国际专利分类:   H01L033/42
  • 专利详细信息:   CN103078036-A 01 May 2013 H01L-033/42 201366 Pages: 8 Chinese
  • 申请详细信息:   CN103078036-A CN10017932 17 Jan 2013
  • 优先权号:   CN10017932

▎ 摘　　要

NOVELTY - The method involves arranging a p-type gallium nitride (GaN) layer (203) and an n-type gallium nitride layer (205) on an LED epitaxial wafer. Thickness of the LED epitaxial wafer is 7-10 nm. Impurities are removed on a graphene film layer (201) and a nanometer indium tin oxide (ITO) thin layer (202) by photo-etching process. USE - Method for preparing a graphene film of a transparent electrode. ADVANTAGE - The method enables improving light transmittance efficiency of the graphene film. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene film. Graphene film layer (201) Thin layer (202) P-type gallium nitride layer (203) Multi-quantum-well layer (204) N-type gallium nitride layer (205)