▎ 摘　　要

NOVELTY - The structure (160) has a first conductive pattern (215) on a substrate, where the first conductive pattern includes doped polysilicon. An ohmic contact pattern (275) is arranged on the first conductive pattern, where the ohmic contact pattern includes a metal silicide. An oxidation prevention pattern (285) is arranged on the ohmic contact pattern, where the oxidation prevention pattern includes a metal silicon nitride. A diffusion barrier includes graphene. A second conductive pattern (245) is arranged on the diffusion barrier, where the second conductive pattern includes a metal. The first conductive pattern, the ohmic contact pattern, the oxidation prevention pattern, the diffusion barrier, and the second conductive pattern are stacked in the stated order on the substrate. USE - Wiring structure for use in a semiconductor device (claimed). ADVANTAGE - The structure reduces a contact resistance between the polysilicon layer and the metal layer and prevents elements of the poly silicon layer and metal layer from diffusing. The structure reduces thickness of the ohmic contact layer or the diffusion barrier, and reduces a thickness of a wiring structure. The structure forms oxidation prevention pattern by an etching process using a mask to form a first conductive pattern, an ohmic-contact pattern, a diffusion barrier, an oxidation-prevention pattern and a second conductive-pattern stacked on the substrate, thus reducing the thickness of wiring structure. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a semiconductor device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a wiring structure. Wiring structure (160) First conductive pattern (215) Second conductive pattern (245) Ohmic contact pattern (275) Oxidation prevention pattern (285)