▎ 摘　　要

NOVELTY - Growing a two-dimensional transition metal chalcogenide (TMC) film, involves placing a patterned metal layer on the surface of a substrate, supplying a chalcogen precursor to a reaction chamber with the substrate, supplying 0.1-2 μg a transition metal precursor to the reaction chamber and evacuating the chalcogen precursor, transition metal precursor and by-products generated from the reaction chamber. USE - Method for growing two-dimensional transition metal chalcogenide film that is utilized for manufacturing a device such as transistor, diode, optoelectronic device, tunneling device, logic device and memory device (all claimed). ADVANTAGE - The method enables cost-effective growing of two-dimensional TMC film with secured uniformity and high quality, on a wafer scale by simultaneously performing deposition and etching of two-dimensional TMC film, by controlling supply time of transition metal precursor and by controlling a deposition rate of two-dimensional TMC film. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included a method for manufacturing a device containing two-dimensional transition metal chalcogenide (TMC) film, which involves: a. growing the two-dimensional TMC film on a substrate; b. forming an electrode on the two-dimensional TMC film.