▎ 摘　　要

NOVELTY - Graphene/boron nitride layered composite material comprises a film of graphene and boron nitride layers set alternately. USE - The composite material is used in super-capacitor, photocatalysis, and adsorption fields. ADVANTAGE - The composite material has specific surface area of 200-800 m2/g, and semiconductor band gap of 0.5-5 eV (claimed); and has uniform thickness, and semiconductor characteristic with adjustable band gap. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing graphene/boron nitride layered composite material, comprising (i) providing boron azine and graphene oxide according to the mass ratio of 1:0.2-5, (ii) mixing boron azine and graphene oxide, adding 50-200 times of anhydrous organic solvent according to graphene oxide quality, ultrasonicating for 60-300 minutes to obtain uniform and stable dispersion of boron azine and graphene oxide mixed solution, (iii) adding boron azine and graphene oxide mixed solution in a culture dish with substrate under the room temperature condition and drying for 60-600 minutes in vacuum, completely removing anhydrous organic solvent to btain layered thin film on the upper substrate, and (iv) transferring layer of thin film into a tubular furnace with the substrate, under the protection of nitrogen, at 500-1500 degrees C under hot condition, processing for 60-180 minutes, naturally cooling to the room temperature to obtain the graphene/boron nitride layered composite material.