▎ 摘　　要

NOVELTY - Preparation of graphene film layer by plasma-assisted chemical vapor deposition (CVD) on surface of monocrystalline silicon involves (S1) vacuum annealing the monocrystalline silicon, and (S2) placing the monocrystalline silicon in plasma-assisted CVD tube furnace as substrate, and performing plasma-assisted CVD using carbon monoxide gas as carbon source. USE - Preparation of graphene film layer by plasma-assisted chemical vapor deposition on surface of monocrystalline silicon used in semiconductor and electronic application. ADVANTAGE - The method is simple, economical, and safety, provides graphene film layer on the surface of the monocrystalline silicon at lower temperature realized by combining control of deposition process parameters, and avoiding the introduction of hydrogen to affect the graphene structure and cause safety hazards.