▎ 摘　　要

NOVELTY - A graphene thin film is manufactured by preparing graphene oxide thin film in which a part of graphene oxide flakes overlaps, making carbon-containing gas contact graphene oxide thin film, and reducing graphene oxide thin film. USE - Manufacture of graphene thin film for electronic device which is field effect transistor used for sensor and array element (all claimed). ADVANTAGE - Graphene thin film has excellent electrical property, such as high mobility and high electrical conductivity, and can be prepared at a low cost. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for: (1) electronic device comprising graphene thin film in a channel layer; (2) array element comprising substrate, graphene thin film which has 1st region and 2nd region, 1st channel layer which has graphene thin film of 1st region, 1st field effect transistor which has 1st source electrode and 1st drain electrode which are installed on both sides of 1st channel layer, and 1st gate electrode, 2nd channel layer which has graphene thin film of 2nd region, and 2nd field effect transistor which has 2nd source electrode and 2nd drain electrode which are installed on both sides of 2nd channel layer, and 2nd gate electrode in which 1st functional group bonded with 1st to-be-tested substance is on surface of graphene thin film of 1st region, and 2nd functional group bonded with 2nd to-be-tested substance is on surface of graphene thin film of 2nd region; and (3) sensing method which involves making 1st detection solution containing 1st to-be-tested substance and 2nd detection solution containing 2nd to-be-tested substance respectively contact 1st channel layer and 2nd channel layer, detecting electrical potential change of 1st channel layer and 2nd channel layer generated by bonding with 1st functional group and 2nd functional group, and detecting 1st to-be-tested substance and 2nd to-be-tested substance. DESCRIPTION OF DRAWING(S) - The drawing shows a graph of the relationship between channel length (Lc in micrometer) of reduced graphene oxide-field effect transistor when each reduction process is performed and mobility (in square cm/Vs). (Drawing includes non-English language text).