▎ 摘　　要

NOVELTY - An oxide film formed on a surface of silicon carbide single crystal substrate by natural oxidation is removed, the silicon surface of silicon carbide single crystal substrate is exposed and heated in an oxygen atmosphere, to form silica layer on the surface of silicon carbide single crystal substrate. The silicon carbide single crystal substrate provided with silica layer is heated in a vacuum, to form layer(s) of the graphene on the silicon carbide single crystal substrate. Thus, manufacture of graphene/silicon carbide composite material is carried out. USE - Manufacture of graphene/silicon carbide composite material used for electronic component e.g. semiconductor. ADVANTAGE - The method provides graphene/silicon carbide composite material having flat large-area graphene and uniform layers.