▎ 摘　　要

NOVELTY - The method involves etching a first metal oxide layer (212) to provide open surface contact regions. A metal layer comprising a metal layer portion (214a) for providing a source with a source contact (214a1) over a graphene surface source contact (211a) and a metal layer portion for providing a drain with a drain contact (214b1) over the graphene surface drain contact, is deposited. A grown-in graphitic interface layer (220) is formed at an interface between the source contact and the graphene surface source contact and between the drain contact and the graphene surface drain contact. USE - Method for forming contacts such as source/drain contacts, for a graphene FET (claimed)/carbon nanotube (CNT) FET used in analog devices and sensors. ADVANTAGE - The method enables forming the grown-in graphitic interface layer in the contact regions between a contact metal layer and graphene surface source and drain contacts for providing low contact resistance to a graphene surface, thus minimizing effect of extrinsic effects/contamination. DESCRIPTION OF DRAWING(S) - The drawing shows a cross sectional view of a graphene or CNT FET comprising a graphitic interface layer at source and drain contacts. Graphene surface source contact (211a) Metal oxide layer (212) Metal layer portion (214a) Source contact (214a1) Drain contact (214b1) Grown-in graphitic interface layer (220)