• 专利标题:   Patterning method for manufacturing of a desired pattern of an electrically conducting, semiconducting or insulating material on a substrate,.
  • 专利号:   WO2022106755-A1, FI202105371-A
  • 发明人:   LEPPAENIEMI J, SNECK A
  • 专利权人:   VALTION TEKNILLINEN TUTKIMUSKESKUS
  • 国际专利分类:   H01L051/00, H05K003/12, B41M001/26, B81C001/00, B82Y040/00, C23C016/04, G03F007/00, H01L021/027, H01L021/308
  • 专利详细信息:   WO2022106755-A1 27 May 2022 202247 Pages: 34 English
  • 申请详细信息:   WO2022106755-A1 WOFI050778 17 Nov 2021
  • 优先权号:   FI006184, FI005371

▎ 摘  要

NOVELTY - Patterning method involves producing a patterned polymer ink film (22') having form of a negative of the desired pattern defined by first portions of the semi-dry polymer ink film remaining on top of the polydimethylsiloxane surface of a roller (20), by contacting a three-dimensional relief pattern (25) with a positive image of the desired pattern temporarily, with the semi-dry polymer ink film so that second portions of the semi-dry polymer ink film are transferred to the three-dimensional relief pattern, transferring the film from the polydimethylsiloxane surface of the roller onto a substrate to produce a negative of the desired pattern on the substrate, depositing a conductive, semi-conductive or insulating material layer onto the face of the substrate with the negative of the pattern and dissolving the negative of the desired pattern using an organic solvent to yield the desired pattern formed by the deposited conductive, semi-conductive or insulating material on the substrate. USE - Patterning method used for forming desired pattern of electroconducting, semiconducting or insulating material on a substrate for touch panel, heater film, antenna and/or photovoltaic current collector, metal oxide, organic, carbon nanotube, graphene, polycrystalline silicon or amorphous silicon thin-film transistor source, drain and/or gate electrode, metal oxide pattern for metal oxide thin-film transistor, diode or resistive random access memory, resistor, capacitor, inductor, metamaterial, plasmonic structure, filter, absorber, optical code, interdigitated electrode for sensor, visually transparent indium tin oxide antenna and indium tin oxide layer for touch screen (all claimed). ADVANTAGE - The method enables low-cost forming of high quality conductive high-resolution structures on various substrates. It enables using printing for defining patterns of any material, including reactive metals such as aluminum (Al), titanium (Ti), and molybdenum (Mo), that cannot be used in nanoparticle inks, as well as semiconductors and insulating dielectric layers. Vertical sidewalls of the polymer layer with sharp edges allow the deposited material to be patterned with high resolution, with low edge roughness and without forming edge ears on edges of the sidewalls that would arise from the material deposited on the inclined walls of the patterned layer. The method can be combined with various deposition techniques and has potential to achieve high resolution over large areas. DETAILED DESCRIPTION - Patterning method involves providing a semi-dry polymer ink film (22) on top of a polydimethylsiloxane surface of a roller, producing a patterned polymer ink film (22') having form of a negative of the desired pattern defined by first portions of the semi-dry polymer ink film remaining on top of the polydimethylsiloxane surface of the roller, by contacting a three-dimensional relief pattern with a positive image of the desired pattern temporarily, with the semi-dry polymer ink film so that second portions (22'') of the semi-dry polymer ink film are transferred to the three-dimensional relief pattern, transferring the patterned polymer ink film from the polydimethylsiloxane surface of the roller onto a substrate to produce a negative of the desired pattern on the substrate, depositing a conductive, semi-conductive or insulating material layer onto the face of the substrate with the negative of the desired pattern, using physical vapor deposition or chemical vapor deposition and dissolving the negative of the desired pattern using an organic solvent to yield the desired pattern formed by the deposited conductive, semi-conductive or insulating material on the substrate. The polymer ink comprises a polymer dissolved in at least one organic solvent. The patterned polymer ink film has vertical sidewalls caused by fracturing of the semi dry polymer ink film at the edges of the three-dimensional relief pattern. The fracturing is caused by cohesion of the semi-dry polymer ink film and adhesion between the second portions of the semi-dry polymer ink film and the three-dimensional relief pattern. The negative of the desired pattern on the substrate has vertical sidewalls. INDEPENDENT CLAIMS are included for the following: (1) apparatus for manufacturing of desired pattern; and (2) substrate with desired pattern. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the patterning method. Roller (20) Semi-dry polymer ink film (22) Patterned polymer ink film (22') Portion (22'') Patterned plate (24) Three-dimensional relief pattern (25)