• 专利标题:   Method for fabricating strain sensing device directly on structure, involves attaching pin connector to electrically conductive strain sensing pattern.
  • 专利号:   US11441956-B1
  • 发明人:   HECKMAN E M, AGA R S
  • 专利权人:   US SEC OF AIR FORCE
  • 国际专利分类:   G01L001/00, G01L001/18
  • 专利详细信息:   US11441956-B1 13 Sep 2022 G01L-001/00 202277 English
  • 申请详细信息:   US11441956-B1 US992169 13 Aug 2020
  • 优先权号:   US377302, US992169

▎ 摘  要

NOVELTY - The method involves depositing a material on the structure. The material exhibits a piezo-resistive effect. The strain sensing pattern is sintered from the material such that the strain sensing pattern becomes electrically conductive after depositing the material onto the structure. The pin connector is attached to the electrically conductive strain sensing pattern. The structure is a functional structure comprising one of a support beam and a wing of a vehicle. The depositing and sintering steps are configured to conform to a map of the curvature of the structure. The material comprises one of graphene, silver and copper. The depositing process includes using aerosol spray, a custom spray gun, rolling or painting material onto the structure. USE - Method for fabricating strain sensing device (claimed) directly on structure. ADVANTAGE - The strain sensing device is directly fabricated on a structure of interest to measure strain experienced by the structure, the fabrication involving printing or other material deposition methods and laser scanning or other selective sintering methods. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a strain sensing device. DESCRIPTION OF DRAWING(S) - The drawing shows the schematic diagram illustrating a multi-layer graphene-based strain sensing device printed or deposited directed on a structure. 22Functional structure 24First insulating layer 26First graphene layer 30Large contact pad 34Second graphene layer